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UPC1888ECT Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPC1888ECTNEC135Yes

UPC1888ECT** is a high-frequency bipolar transistor manufactured by **NEC**.

The UPC1888ECT is a high-frequency bipolar transistor manufactured by NEC.

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 20V
  • Emitter-Base Voltage (VEBO): 4V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 150mW
  • Transition Frequency (fT): 6GHz (minimum)
  • Noise Figure (NF): 1.5dB (typical at 1GHz)
  • Package: SOT-23 (Miniature Surface-Mount)

Descriptions & Features:

  • Designed for high-frequency amplification in RF and microwave applications.
  • Low noise figure makes it suitable for low-noise amplifiers (LNAs).
  • High transition frequency (fT) ensures excellent performance in VHF/UHF and microwave circuits.
  • Compact SOT-23 package for space-constrained designs.
  • Commonly used in wireless communication, satellite receivers, and RF front-end circuits.

This transistor is optimized for low-power, high-frequency applications where minimal noise and high gain are critical.

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