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2SA992 Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
2SA992NEC446Yes

2SA992 is a PNP bipolar junction transistor (BJT) commonly used in amplifier circuits.

The 2SA992 is a PNP bipolar junction transistor (BJT) commonly used in amplifier circuits. It is manufactured by various companies, including Toshiba and other semiconductor manufacturers. The NEC (Nippon Electric Company) specifications for the 2SA992 transistor include the following key parameters:

  • Type: PNP BJT
  • Collector-Base Voltage (VCBO): -120V
  • Collector-Emitter Voltage (VCEO): -120V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -0.7A
  • Power Dissipation (Ptot): 0.9W
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE): 100 to 320 (typically around 200)
  • Package: TO-92

These specifications are standard for the 2SA992 transistor and are consistent across manufacturers, including NEC. Always refer to the specific datasheet for detailed performance characteristics and application guidelines.

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