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2SB810 Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
2SB810NEC128Yes

2SB810 is a PNP silicon epitaxial planar transistor manufactured by NEC.

The 2SB810 is a PNP silicon epitaxial planar transistor manufactured by NEC. Here are the key specifications:

  • Type: PNP
  • Material: Silicon
  • Structure: Epitaxial Planar
  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -60V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Total Power Dissipation (PT): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at VCE = -5V, IC = -1A)
  • Transition Frequency (fT): 20MHz (at VCE = -5V, IC = -1A, f = 1MHz)
  • Package: TO-220

These specifications are based on the NEC datasheet for the 2SB810 transistor.

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