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2SB820-E1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB820-E1NEC529Yes

NEC 2SB820-E1** is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.

The NEC 2SB820-E1 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Below are its key specifications, descriptions, and features:

Manufacturer: NEC (Nippon Electric Company)

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A (continuous)
  • Collector Power Dissipation (PC): 1W (at 25°C)
  • DC Current Gain (hFE): 60 to 320 (at IC = 0.5A, VCE = -5V)
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Package Type: TO-92 (plastic-encapsulated)
  • Pin Configuration: Emitter (E), Base (B), Collector (C)
  • Material: Silicon (Si)

Features:

  • High current gain (hFE) for improved amplification
  • Low saturation voltage for efficient switching
  • Suitable for low-power audio amplification and signal processing
  • Compact TO-92 package for easy PCB mounting

This transistor is commonly used in audio amplifiers, signal processing circuits, and general switching applications. Always refer to the datasheet for detailed performance curves and application notes.

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