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2SC2001 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2001NEC347Yes

2SC2001** is a high-voltage NPN bipolar junction transistor (BJT) manufactured by **NEC**.

The 2SC2001 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by NEC. Below are its specifications, descriptions, and features based on available data:

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 300V
  • Collector-Emitter Voltage (VCEO): 300V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 0.7A
  • Power Dissipation (PC): 10W
  • DC Current Gain (hFE): 40 to 320 (depending on operating conditions)
  • Transition Frequency (fT): 50MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-126

Descriptions:

The 2SC2001 is a medium-power transistor designed for high-voltage switching and amplification applications. It is commonly used in power supply circuits, audio amplifiers, and general-purpose high-voltage switching.

Features:

  • High breakdown voltage (300V)
  • Medium current handling capability (0.7A)
  • Good linearity for amplification
  • Suitable for high-frequency applications (up to 50MHz)
  • Robust thermal performance with a power dissipation of 10W

This transistor is now considered obsolete, and equivalent or modern replacements may be recommended for new designs.

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