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C1406HA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
C1406HANEC1400Yes

NEC C1406HA** is a high-performance, high-frequency transistor designed for RF and microwave applications.

The NEC C1406HA is a high-performance, high-frequency transistor designed for RF and microwave applications. Below are the manufacturer specifications, descriptions, and features:

Manufacturer Specifications:

  • Manufacturer: NEC (Nippon Electric Company)
  • Type: NPN Silicon RF Transistor
  • Package: TO-92 (Plastic Encapsulated)
  • Collector-Base Voltage (VCB): 30V
  • Collector-Emitter Voltage (VCE): 20V
  • Emitter-Base Voltage (VEB): 3V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PD): 300mW
  • Transition Frequency (fT): 1.5GHz (typical)
  • Noise Figure (NF): 2.5dB (typical at 1GHz)
  • Gain (hFE): 30-200 (varies with operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The C1406HA is a small-signal RF transistor optimized for high-frequency amplification in applications such as VHF/UHF amplifiers, oscillators, and RF front-end circuits. Its low noise and high transition frequency make it suitable for communication and signal processing systems.

Features:

  • High Transition Frequency (fT): 1.5GHz for excellent high-frequency response.
  • Low Noise Figure: 2.5dB at 1GHz, ideal for sensitive RF applications.
  • Compact TO-92 Package: Easy to integrate into circuit designs.
  • Wide Operating Temperature Range: Reliable performance in varying conditions.
  • Good Linearity: Suitable for amplification in communication systems.

This transistor is commonly used in RF amplifiers, mixers, and oscillator circuits in consumer and industrial electronics.

(Note: Always refer to the official NEC datasheet for precise application details.)

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