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H1537B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
H1537BNEC129Yes

NEC H1537B** is a high-performance **NPN silicon transistor** designed for general-purpose amplification and switching applications.

The NEC H1537B is a high-performance NPN silicon transistor designed for general-purpose amplification and switching applications.

Manufacturer Specifications:

  • Manufacturer: NEC (Nippon Electric Company)
  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: TO-92 (plastic encapsulation)
  • Maximum Ratings:
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 150mA
  • Total Power Dissipation (Ptot): 300mW
  • Operating Temperature Range (Tj): -55°C to +150°C

Electrical Characteristics (Typical):

  • DC Current Gain (hFE): 100–400 (at IC = 2mA, VCE = 5V)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 0.2V (max) (at IC = 100mA, IB = 10mA)
  • Transition Frequency (fT): 200MHz

Features:

  • Low noise performance
  • High current gain (hFE)
  • Fast switching speed
  • Suitable for small-signal amplification and switching circuits

Applications:

  • Audio amplification
  • Signal processing
  • Switching circuits
  • Driver stages

This transistor is commonly used in consumer electronics, communication devices, and industrial control systems. Always refer to the official NEC datasheet for precise operating conditions.

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