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UPC1181H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPC1181HNEC300Yes

Manufacturer:** NEC **Part Number:** UPC1181H ### **Specifications:** - **Type:** RF Power Transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Power Dissipation (Pc):** 25W - **Collector-Base Voltage (Vcbo):** 60V -

Manufacturer: NEC

Part Number: UPC1181H

Specifications:

  • Type: RF Power Transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Power Dissipation (Pc): 25W
  • Collector-Base Voltage (Vcbo): 60V
  • Collector-Emitter Voltage (Vceo): 60V
  • Emitter-Base Voltage (Vebo): 5V
  • Collector Current (Ic): 1.5A
  • Transition Frequency (ft): 200MHz
  • Gain-Bandwidth Product: High
  • Package: TO-220

Descriptions:

The UPC1181H is an NPN silicon RF power transistor designed for high-frequency amplification applications. It is commonly used in RF power amplifiers, transmitters, and other RF circuits requiring high gain and efficiency.

Features:

  • High power gain
  • Excellent linearity
  • Low distortion
  • Suitable for VHF/UHF applications
  • Robust TO-220 package for heat dissipation

This transistor is optimized for stable performance in RF circuits and is widely used in communication equipment.

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