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BC807-40W+115 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC807-40W+115NXP100Yes

BC807-40W+115** is a PNP general-purpose transistor manufactured by **NXP Semiconductors**.

The BC807-40W+115 is a PNP general-purpose transistor manufactured by NXP Semiconductors. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCB): -45V
  • Maximum Collector-Emitter Voltage (VCE): -45V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Continuous Collector Current (IC): -500mA
  • Total Power Dissipation (Ptot): 330mW
  • DC Current Gain (hFE): 250–600 (at IC = -100mA, VCE = -1V)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-323 (SC-70)

Descriptions:

  • The BC807-40W+115 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.
  • It is part of NXP's BC807 series, optimized for low-voltage, high-current performance.
  • The SOT-323 package makes it suitable for space-constrained PCB designs.

Features:

  • High current gain (hFE) for efficient signal amplification.
  • Low saturation voltage, enhancing switching efficiency.
  • Compact SMD package for high-density circuit designs.
  • RoHS compliant, ensuring environmental safety.

This transistor is commonly used in audio amplifiers, signal processing, and low-power switching circuits.

(Note: Always refer to the official NXP datasheet for precise design and application details.)

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