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BC856BWT1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC856BWT1ON2500Yes

BC856BWT1 is a PNP transistor manufactured by ON Semiconductor.

The BC856BWT1 is a PNP transistor manufactured by ON Semiconductor. Here are its key specifications:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Package: SOT-323 (SC-70)
  • Collector-Base Voltage (VCBO): -80V
  • Collector-Emitter Voltage (VCEO): -65V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -100mA
  • Power Dissipation (PD): 200mW
  • DC Current Gain (hFE): 125 to 800
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C

These specifications are based on ON Semiconductor's datasheet for the BC856BWT1.

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