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FDC658AP Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDC658APON 30000Yes

-30V Single P-Channel Logic Level PowerTrench?MOSFET

The FDC658AP is a P-channel MOSFET manufactured by ON Semiconductor (now part of onsemi). Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): -4.3A
  • Pulsed Drain Current (IDM): -17A
  • Power Dissipation (PD): 2.5W
  • On-Resistance (RDS(on)): 50mΩ (max) at VGS = -4.5V
  • Threshold Voltage (VGS(th)): -1V to -2V
  • Operating Junction Temperature (TJ): -55°C to +150°C

Descriptions:

  • Package: TO-252 (DPAK)
  • Polarity: P-Channel
  • Technology: Advanced Trench MOSFET
  • Applications: Power management, load switching, DC-DC converters, and battery protection circuits.

Features:

  • Low On-Resistance (RDS(on)) for efficient power handling.
  • Fast Switching Speed for improved performance in switching applications.
  • Low Gate Charge (Qg) for reduced drive requirements.
  • Avalanche Energy Rated for ruggedness in inductive load applications.
  • Lead-Free & RoHS Compliant for environmental safety.

This MOSFET is designed for high-efficiency power management in portable electronics, automotive systems, and industrial applications.

*(Data sourced from ON Semiconductor/onsemi official documentation.)*

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