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FDV301N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDV301NON14000Yes

Digital FET , N-Channel

The FDV301N is an N-channel MOSFET manufactured by ON Semiconductor.

Specifications:

  • Drain-Source Voltage (VDS): 25V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): 0.68A
  • Pulsed Drain Current (IDM): 2.7A
  • Power Dissipation (PD): 0.35W
  • On-Resistance (RDS(on)): 1.2Ω (max) @ VGS = 4.5V
  • Threshold Voltage (VGS(th)): 0.7V (min) – 1.5V (max)
  • Package: SOT-23

Descriptions:

  • Low threshold voltage for compatibility with low-voltage logic.
  • Designed for high-efficiency switching applications.
  • RoHS compliant and lead-free.

Features:

  • Low On-Resistance: Optimized for power efficiency.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Small Form Factor: SOT-23 package for space-constrained designs.
  • ESD Protection: Enhanced reliability in sensitive circuits.

This MOSFET is commonly used in power management, load switching, and battery-powered applications.

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