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MJE340G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MJE340GON 10000Yes

MJE340G** is a high-voltage NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The MJE340G is a high-voltage NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCE): 300V
  • Collector-Base Voltage (VCB): 300V
  • Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 500mA (continuous)
  • Power Dissipation (PD): 20W (at 25°C)
  • DC Current Gain (hFE): 30 to 150 (at IC = 150mA, VCE = 10V)
  • Transition Frequency (fT): 10MHz (typical)
  • Operating Temperature Range: -65°C to +150°C
  • Package: TO-225AA (TO-126)

Descriptions:

The MJE340G is designed for high-voltage switching and amplification applications. It is commonly used in power supply circuits, voltage regulators, and audio amplifiers due to its high breakdown voltage and moderate current handling capability.

Features:

  • High-voltage capability (300V)
  • Medium power dissipation (20W)
  • Complementary PNP type available (MJE350G)
  • TO-225AA (TO-126) package for easy mounting
  • Suitable for linear and switching applications

This transistor is widely used in industrial and consumer electronics where high-voltage operation is required.

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