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MMBT4401LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT4401LT1GON33497Yes

Switching Transistor(NPN Silicon)

The MMBT4401LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 40V
  • Maximum Collector-Emitter Voltage (VCE): 40V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Continuous Collector Current (IC): 600mA
  • Total Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100–300 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 250MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: SOT-23 (SC-59)

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High current gain with low saturation voltage.
  • Suitable for low-power, high-speed switching.
  • Compact SOT-23 package for space-constrained designs.
  • RoHS compliant and lead-free.

This transistor is commonly used in signal amplification, driver stages, and digital logic circuits.

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