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MMUN2111LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMUN2111LT1GON845Yes

MMUN2111LT1G** is a digital transistor manufactured by **ON Semiconductor**.

The MMUN2111LT1G is a digital transistor manufactured by ON Semiconductor.

Specifications:

  • Type: NPN Digital Transistor (BJT) with built-in resistors
  • Package: SOT-23 (SC-59, TO-236)
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Continuous Collector Current (IC): 100mA
  • Base Resistor (R1): 10 kΩ
  • Base-Emitter Resistor (R2): 10 kΩ
  • DC Current Gain (hFE): 20 to 60 (at IC = 10mA, VCE = 5V)
  • Power Dissipation (PD): 225mW
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The MMUN2111LT1G integrates a bias resistor network to simplify circuit design.
  • It is designed for switching applications in digital circuits.
  • Suitable for low-power, high-speed switching.

Features:

  • Built-in bias resistors (R1 and R2)
  • Reduced component count in PCB design
  • High voltage capability
  • Compact SOT-23 package for space-saving applications
  • Pb-free and RoHS compliant

This transistor is commonly used in automotive, industrial, and consumer electronics for logic-level switching and signal amplification.

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