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MUN5233DW1T1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MUN5233DW1T1GON490Yes

MUN5233DW1T1G** is a dual NPN resistor-equipped transistor (RET) manufactured by **ON Semiconductor**.

The MUN5233DW1T1G is a dual NPN resistor-equipped transistor (RET) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: Dual NPN Bipolar Junction Transistor (BJT) with built-in resistors
  • Package: SOT-363 (SC-88)
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Continuous Collector Current (IC): 100mA per transistor
  • Base Resistor (R1, R2): 10kΩ (integrated)
  • Emitter Resistor (RE1, RE2): 10kΩ (integrated)
  • Power Dissipation (PD): 200mW
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for general-purpose switching and amplification applications.
  • Features two independent NPN transistors with built-in base and emitter resistors, reducing external component count.
  • Compact SOT-363 package suitable for space-constrained designs.

Features:

  • Integrated resistors simplify circuit design.
  • Matched resistor values for consistent performance.
  • High voltage capability (50V).
  • Low saturation voltage for efficient switching.
  • Pb-free and RoHS compliant.

For detailed electrical characteristics, refer to the official ON Semiconductor datasheet.

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