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NTR2101PT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NTR2101PT1GON11440Yes

NTR2101PT1G** is a P-channel MOSFET manufactured by **ON Semiconductor**.

The NTR2101PT1G is a P-channel MOSFET manufactured by ON Semiconductor.

Key Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -3.3A
  • Power Dissipation (PD): 1.4W
  • On-Resistance (RDS(on)): 70mΩ (max) at VGS = -4.5V
  • Threshold Voltage (VGS(th)): -0.7V (max)
  • Package: SOT-23

Descriptions & Features:

  • Designed for low-voltage, high-efficiency switching applications.
  • Low on-resistance for reduced power loss.
  • Fast switching speed suitable for power management.
  • Lead-free & RoHS compliant.
  • Applications: Power management, load switching, battery protection, and DC-DC converters.

This MOSFET is optimized for portable electronics, power supplies, and other space-constrained designs requiring efficient power handling.

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