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SBCP56-10T1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SBCP56-10T1GON4330Yes

SBCP56-10T1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The SBCP56-10T1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. Here are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Emitter Voltage (VCE): -50 V
  • Collector-Base Voltage (VCB): -50 V
  • Emitter-Base Voltage (VEB): -5 V
  • Continuous Collector Current (IC): -1 A
  • Power Dissipation (PD): 1.5 W
  • DC Current Gain (hFE): 100 – 250 (at IC = -150 mA, VCE = -1 V)
  • Transition Frequency (fT): 100 MHz
  • Operating Temperature Range: -55°C to +150°C

Package:

  • Package Type: SOT-223 (SC-73)
  • Mounting Type: Surface Mount

Features:

  • High current gain bandwidth product
  • Low saturation voltage
  • Designed for general-purpose amplification and switching applications
  • Suitable for surface-mount PCB designs

Applications:

  • Signal amplification
  • Switching circuits
  • Driver stages in audio and RF applications

This transistor is optimized for efficient performance in compact, space-constrained designs.

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