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The 2N7002ET1G is a N-channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

• Drain-Source Voltage (V_DS): 60V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 300mA
• Pulsed Drain Current (I_DM): 1.2A
• Power Dissipation (P_D): 200mW
• On-Resistance (R_DS(on)): 5Ω (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 1V to 2.5V
• Input Capacitance (C_iss): 50pF (typical)
• Output Capacitance (C_oss): 15pF (typical)
• Reverse Transfer Capacitance (C_rss): 5pF (typical)
• Turn-On Delay Time (t_d(on)): 10ns (typical)
• Turn-Off Delay Time (t_d(off)): 35ns (typical)
• Operating Temperature Range: -55°C to +150°C
• Package: SOT-23 (TO-236AB)

Description:

The 2N7002ET1G is a small-signal N-channel enhancement-mode MOSFET designed for low-voltage, low-current switching applications. It is commonly used in load switching, signal amplification, and logic-level conversion due to its fast switching speed and low threshold voltage.

Features:

• Low Threshold Voltage (1V min) for compatibility with logic-level signals
• Fast Switching Speed for efficient performance in high-frequency applications
• Low On-Resistance for reduced power dissipation
• ESD Protection (up to 2kV) for improved reliability
• Pb-Free & RoHS Compliant

This MOSFET is widely used in portable electronics, power management circuits, and general-purpose switching applications.