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2N7002ET1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7002ET1GONSEMI48000Yes

2N7002ET1G** is a **N-channel MOSFET** manufactured by **ON Semiconductor**.

The 2N7002ET1G is a N-channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 300mA
  • Pulsed Drain Current (IDM): 1.2A
  • Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 5Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V to 2.5V
  • Input Capacitance (Ciss): 50pF (typical)
  • Output Capacitance (Coss): 15pF (typical)
  • Reverse Transfer Capacitance (Crss): 5pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 35ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (TO-236AB)

Description:

The 2N7002ET1G is a small-signal N-channel enhancement-mode MOSFET designed for low-voltage, low-current switching applications. It is commonly used in load switching, signal amplification, and logic-level conversion due to its fast switching speed and low threshold voltage.

Features:

  • Low Threshold Voltage (1V min) for compatibility with logic-level signals
  • Fast Switching Speed for efficient performance in high-frequency applications
  • Low On-Resistance for reduced power dissipation
  • ESD Protection (up to 2kV) for improved reliability
  • Pb-Free & RoHS Compliant

This MOSFET is widely used in portable electronics, power management circuits, and general-purpose switching applications.

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