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BSS138K Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSS138KONSEMI9000Yes

50V N-Channel Logic Level Enhancement Mode Field Effect Transistor

The BSS138K is an N-channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 50V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 220mA
  • Pulsed Drain Current (IDM): 800mA
  • Power Dissipation (PD): 360mW
  • On-Resistance (RDS(on)): 3.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 0.8V to 2.5V
  • Input Capacitance (Ciss): 25pF (typ)
  • Output Capacitance (Coss): 6pF (typ)
  • Reverse Transfer Capacitance (Crss): 2.5pF (typ)
  • Operating Temperature Range: -55°C to +150°C

Description:

The BSS138K is a small-signal MOSFET designed for low-voltage, high-speed switching applications. It is optimized for low on-resistance and fast switching performance, making it suitable for power management, load switching, and signal amplification in portable and battery-powered devices.

Features:

  • Low Threshold Voltage: Enables efficient operation in low-voltage circuits.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Low On-Resistance: Reduces power loss and improves efficiency.
  • Small Package (SOT-23): Space-saving design for compact PCB layouts.
  • ESD Protection: Robust against electrostatic discharge.
  • Lead-Free & RoHS Compliant: Environmentally friendly.

This MOSFET is commonly used in DC-DC converters, load switches, battery protection circuits, and signal switching applications.

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