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IRF530 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF530HARRIS/AMPI135Yes

IRF530 is an N-channel power MOSFET manufactured by International Rectifier (IR).

The IRF530 is an N-channel power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from the Manufactor Datasheet:

Manufacturer: International Rectifier (IR)

Key Specifications:

  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 17A (at 25°C)
  • Pulsed Drain Current (IDM): 68A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 75W (at 25°C)
  • On-Resistance (RDS(on)): 0.11Ω (max at VGS = 10V)
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 600pF (typical)
  • Output Capacitance (Coss): 190pF (typical)
  • Reverse Transfer Capacitance (Crss): 50pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Rise Time (tr): 30ns (typical)
  • Turn-Off Delay Time (td(off)): 55ns (typical)
  • Fall Time (tf): 20ns (typical)

Description:

The IRF530 is a high-speed switching MOSFET designed for power applications. It features low on-resistance, fast switching speeds, and high current handling capability, making it suitable for switching power supplies, motor control, and amplifier circuits.

Features:

  • High Voltage Capability (100V)
  • Low On-Resistance (0.11Ω max @ VGS = 10V)
  • Fast Switching Speed
  • Avalanche Energy Specified
  • Improved dv/dt Capability
  • TO-220 Package for Easy Mounting

This information is based solely on the manufacturer's datasheet and technical documentation.

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