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N8T125N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
N8T125NSIGIETIC450Yes

Manufacturer:** SIGIETIC **Part Number:** N8T125N ### **Specifications:** - **Type:** N-Channel MOSFET - **Drain-Source Voltage (VDSS):** 125V - **Continuous Drain Current (ID):** 8A - **Power Dissipation (PD

Manufacturer: SIGIETIC

Part Number: N8T125N

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 125V
  • Continuous Drain Current (ID): 8A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.15Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Package: TO-252 (DPAK)

Descriptions:

The N8T125N is an N-Channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance and fast switching performance, making it suitable for DC-DC converters, motor control, and power management circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • Fast switching speed
  • High voltage capability (125V)
  • Avalanche energy specified
  • Lead-free and RoHS compliant

For detailed application notes, refer to the manufacturer's datasheet.

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