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PFU1N60 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
PFU1N60480Yes

PFU1N60** is an N-channel MOSFET manufactured by various semiconductor companies.

The PFU1N60 is an N-channel MOSFET manufactured by various semiconductor companies. Below are the factual specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 1A
  • Pulsed Drain Current (IDM): 4A
  • Power Dissipation (PD): 25W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 10Ω (typical) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Input Capacitance (Ciss): 35pF (typical)
  • Output Capacitance (Coss): 5pF (typical)
  • Reverse Transfer Capacitance (Crss): 2pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 35ns (typical)
  • Operating Temperature Range: -55°C to +150°C

Description:

The PFU1N60 is a high-voltage N-channel MOSFET designed for switching applications. It features low on-resistance, fast switching speed, and high ruggedness, making it suitable for power supply circuits, inverters, and motor control applications.

Features:

  • High Voltage Capability (600V)
  • Low Gate Charge
  • Fast Switching Performance
  • Low On-Resistance
  • Avalanche Energy Specified
  • TO-252 (DPAK) Package

This information is based on standard datasheet specifications and may vary slightly depending on the manufacturer. Always refer to the official datasheet for precise details.

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