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2SC2003 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2003157Yes

2SC2003** is a high-voltage NPN bipolar junction transistor (BJT) manufactured by **Toshiba**.

The 2SC2003 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by Toshiba.

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 150V
  • Maximum Collector-Emitter Voltage (VCE): 150V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 1.5A
  • Maximum Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 40 to 320
  • Transition Frequency (fT): 50MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

The 2SC2003 is designed for high-voltage switching and amplification applications. It is commonly used in power supply circuits, audio amplifiers, and general-purpose switching applications.

Features:

  • High voltage capability
  • Fast switching speed
  • High current gain
  • Low saturation voltage
  • TO-220 package for easy mounting

This transistor is now obsolete, but equivalents such as 2SC2383, 2SC2073, or 2SC5200 may be used depending on the application.

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