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2SD1458 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1458MAI340Yes

2SD1458 is a silicon NPN transistor manufactured by Mitsubishi Electric Corporation (MAI).

The 2SD1458 is a silicon NPN transistor manufactured by Mitsubishi Electric Corporation (MAI). Here are the key specifications:

  • Type: NPN
  • Material: Silicon
  • Maximum Collector-Base Voltage (VCBO): 150V
  • Maximum Collector-Emitter Voltage (VCEO): 150V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 1.5A
  • Power Dissipation (Pc): 20W
  • Junction Temperature (Tj): 150°C
  • Transition Frequency (fT): 50MHz
  • DC Current Gain (hFE): 60-320

This transistor is typically used in general-purpose amplification and switching applications.

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