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CDG308N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
CDG308NTZ725Yes

CDG308N** is a semiconductor device manufactured by **TZ (Taiwan Semiconductor)**.

The CDG308N is a semiconductor device manufactured by TZ (Taiwan Semiconductor). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 50W
  • On-Resistance (RDS(on)): 8.5mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V to 2.5V
  • Input Capacitance (Ciss): 1800pF (typical)
  • Package: TO-252 (DPAK)

Descriptions:

  • The CDG308N is a high-performance N-Channel MOSFET designed for power switching applications.
  • It features low on-resistance and fast switching characteristics, making it suitable for DC-DC converters, motor control, and power management circuits.
  • The device is housed in a TO-252 (DPAK) package, which provides efficient thermal dissipation.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current handling capability (30A continuous, 120A pulsed).
  • Fast switching speed for improved efficiency in high-frequency applications.
  • Avalanche energy specified for ruggedness in inductive load switching.
  • Lead-free and RoHS compliant for environmental safety.

For exact application details, always refer to the official datasheet from TZ (Taiwan Semiconductor).

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