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IRF730 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF730ST/IOR180Yes

IRF730 is a power MOSFET manufactured by STMicroelectronics (STM).

The IRF730 is a power MOSFET manufactured by STMicroelectronics (STM). Below are the factual specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

  • Manufacturer: STMicroelectronics (STM)
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 400V
  • Continuous Drain Current (ID): 5.5A
  • Pulsed Drain Current (IDM): 22A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 75W
  • On-Resistance (RDS(on)): 1.0Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 350pF (typ)
  • Output Capacitance (Coss): 75pF (typ)
  • Reverse Transfer Capacitance (Crss): 25pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 65ns (typ)
  • Operating Junction Temperature (TJ): -55°C to +150°C

Description:

The IRF730 is a high-voltage N-Channel MOSFET designed for switching applications. It is commonly used in power supplies, motor control, and other high-voltage circuits. The device features low gate charge, fast switching speeds, and robust performance in high-voltage environments.

Features:

  • High Voltage Capability (400V)
  • Low On-Resistance (1.0Ω max)
  • Fast Switching Speed
  • Improved dv/dt Capability
  • Avalanche Energy Specified
  • TO-220 Package for Easy Mounting

This information is based on the manufacturer's datasheet and technical documentation.

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