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Mi4936 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
Mi4936Mega MOS3089Yes

Manufacturer:** Mega MOS **Part Number:** Mi4936 ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Drain-Source Voltage (VDS):** 30V - **Continuous Drain Current (ID):** 60A - **Pulsed Drain Current (IDM):*

Manufacturer: Mega MOS

Part Number: Mi4936

Specifications:

  • Type: Power MOSFET
  • Technology: N-Channel
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 60A
  • Pulsed Drain Current (IDM): 240A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 125W
  • RDS(ON) (Max): 4.5mΩ @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1V (Min) – 2.5V (Max)
  • Input Capacitance (Ciss): 3200pF
  • Output Capacitance (Coss): 800pF
  • Reverse Transfer Capacitance (Crss): 150pF
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-252 (DPAK)

Descriptions:

The Mi4936 is an N-Channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance (RDS(ON)) and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.

Features:

  • Low RDS(ON) for reduced conduction losses
  • High current handling capability
  • Fast switching speed
  • Enhanced thermal performance
  • Robust and reliable construction
  • Suitable for automotive and industrial applications

(Note: Always verify with the latest datasheet from Mega MOS for updated specifications.)

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