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SI2301DS-T1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
SI2301DS-T1	SILICONIX	2764	Yes

SI2301DS-T1 is a P-channel MOSFET manufactured by SIRLICONIX.

The SI2301DS-T1 is a P-channel MOSFET manufactured by SIRLICONIX.

Specifications:

Drain-Source Voltage (V_DS): -20V
Gate-Source Voltage (V_GS): ±12V
Continuous Drain Current (I_D): -3.1A
Power Dissipation (P_D): 1.25W
On-Resistance (R_DS(on)): 85mΩ @ V_GS = -4.5V
Threshold Voltage (V_GS(th)): -1V (typical)
Operating Temperature Range: -55°C to +150°C

Descriptions & Features:

Package: SOT-23 (3-pin)
Technology: Advanced Trench MOSFET
Low On-Resistance: Enhances efficiency in power applications
Fast Switching Speed: Suitable for high-frequency switching circuits
Low Gate Charge: Reduces drive power requirements
RoHS Compliant: Meets environmental standards

This MOSFET is commonly used in power management, load switching, and DC-DC conversion applications.

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