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BCP56T1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BCP56T1GONSEMI6780Yes

BCP56T1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The BCP56T1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 80 V
  • Collector-Base Voltage (VCBO): 80 V
  • Emitter-Base Voltage (VEBO): 5 V
  • Continuous Collector Current (IC): 1 A
  • Power Dissipation (PD): 1.5 W
  • DC Current Gain (hFE): 40 – 250 (at IC = 100 mA, VCE = 1 V)
  • Transition Frequency (fT): 100 MHz (typical)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package Type: SOT-223 (4-pin)

Descriptions:

  • The BCP56T1G is a high-voltage NPN transistor designed for general-purpose amplification and switching applications.
  • It features low saturation voltage and high current gain, making it suitable for driver stages and power management circuits.
  • The SOT-223 package offers good thermal performance in a compact form factor.

Features:

  • High Voltage Capability (VCEO = 80 V)
  • Low Saturation Voltage
  • High Current Gain (hFE)
  • Fast Switching Speed
  • Pb-Free and RoHS Compliant

This transistor is commonly used in power supply circuits, motor control, and audio amplifiers. For detailed electrical characteristics, refer to the official ON Semiconductor datasheet.

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