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FDN360P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDN360PONSEMI15600Yes

Single P-Channel, PowerTrench MOSFET

The FDN360P is a P-channel MOSFET manufactured by ON Semiconductor. Below are its specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -2.7A
  • Pulsed Drain Current (IDM): -10A
  • Power Dissipation (PD): 1W
  • On-Resistance (RDS(on)): 85mΩ @ VGS = -10V
  • Threshold Voltage (VGS(th)): -1V to -2V
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

  • The FDN360P is a P-channel MOSFET designed for low-voltage, high-efficiency switching applications.
  • It is optimized for battery-powered circuits, power management, and load switching due to its low on-resistance and compact SOT-23 package.
  • Suitable for portable electronics, DC-DC converters, and power distribution systems.

Features:

  • Low On-Resistance (RDS(on)) for reduced power loss.
  • Fast Switching Speed for efficient performance.
  • Compact SOT-23 Package for space-constrained applications.
  • Low Threshold Voltage (VGS(th)) for compatibility with low-voltage logic circuits.
  • Lead-Free & RoHS Compliant for environmental safety.

This information is based on ON Semiconductor's official datasheet for the FDN360P.

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