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FDS6679AZ Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDS6679AZONSEMI12500Yes

-30V P-Channel PowerTrench?MOSFET

The FDS6679AZ is a N-Channel PowerTrench MOSFET manufactured by ON Semiconductor.

Key Specifications:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 50A (at 25°C)
  • Pulsed Drain Current (IDM): 200A
  • RDS(ON) (Max):
  • 3.7mΩ at VGS = 10V
  • 4.5mΩ at VGS = 4.5V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W (at 25°C)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SO-8 (Power 56)

Features:

  • Advanced PowerTrench® Process for low RDS(ON) and high efficiency
  • Optimized for high-current applications
  • Low gate charge (Qg) for fast switching
  • Avalanche energy specified for ruggedness
  • Lead-free and RoHS compliant

This MOSFET is commonly used in DC-DC converters, motor control, power management, and battery protection circuits.

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