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LMBTA06LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LMBTA06LT1GLRC8300Yes

LMBTA06LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor** (formerly part of **Littlefuse**).

The LMBTA06LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor (formerly part of Littlefuse).

Key Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Emitter Voltage (VCE): -60V
  • Maximum Collector Current (IC): -500mA
  • Power Dissipation (PD): 300mW
  • DC Current Gain (hFE): 100 (min) to 300 (max)
  • Transition Frequency (fT): 100MHz (typical)
  • Package: SOT-23 (3-pin surface mount)

Features:

  • High current gain
  • Low saturation voltage
  • Designed for general-purpose amplification and switching applications
  • RoHS compliant

Applications:

  • Signal amplification
  • Switching circuits
  • Driver stages

For exact electrical characteristics, refer to the ON Semiconductor datasheet.

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