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LMBTA06LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
LMBTA06LT1G	LRC	8300	Yes

LMBTA06LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor (formerly part of Littlefuse**).

The LMBTA06LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor (formerly part of Littlefuse).

Key Specifications:

Transistor Type: PNP
Maximum Collector-Emitter Voltage (V_CE): -60V
Maximum Collector Current (I_C): -500mA
Power Dissipation (P_D): 300mW
DC Current Gain (h_FE): 100 (min) to 300 (max)
Transition Frequency (f_T): 100MHz (typical)
Package: SOT-23 (3-pin surface mount)

Features:

High current gain
Low saturation voltage
Designed for general-purpose amplification and switching applications
RoHS compliant

Applications:

Signal amplification
Switching circuits
Driver stages

For exact electrical characteristics, refer to the ON Semiconductor datasheet.

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