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2SB1515-L Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1515-L1401Yes

2SB1515-L** is a PNP bipolar junction transistor (BJT) manufactured by **Toshiba**.

The 2SB1515-L is a PNP bipolar junction transistor (BJT) manufactured by Toshiba. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 1A, VCE = -5V)
  • Transition Frequency (fT): 20MHz (Typical)

Description:

The 2SB1515-L is a high-power PNP transistor designed for general-purpose amplification and switching applications. It is commonly used in power supply circuits, audio amplifiers, and motor control systems.

Features:

  • High current capability (3A)
  • Low saturation voltage
  • High power dissipation (25W)
  • Complementary NPN pair: 2SD2015-L
  • TO-220 package for efficient heat dissipation

This transistor is suitable for medium-power applications requiring stable performance under high current conditions.

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