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LMBT5401LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LMBT5401LT1GLRC21624Yes

LMBT5401LT1G** is a PNP Bipolar Junction Transistor (BJT) manufactured by **ON Semiconductor**.

The LMBT5401LT1G is a PNP Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Continuous Collector Current (IC): -600mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100 (min) @ IC = -10mA, VCE = -1V
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (SC-59)

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High current gain (hFE) with low saturation voltage.
  • Suitable for low-power and high-speed switching circuits.
  • Compact SOT-23 package for space-constrained applications.
  • Pb-free and RoHS compliant.

This transistor is commonly used in signal amplification, driver stages, and switching applications in consumer electronics, industrial controls, and communication devices.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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