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MMBT4403LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT4403LT1GONSEMI45000Yes

MMBT4403LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The MMBT4403LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCB): 40V
  • Maximum Collector-Emitter Voltage (VCE): 40V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Continuous Collector Current (IC): 600mA
  • Total Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100–300 @ IC = 150mA
  • Transition Frequency (fT): 200MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (SC-59)

Descriptions:

The MMBT4403LT1G is a general-purpose PNP transistor designed for switching and amplification applications. It is housed in a compact SOT-23 package, making it suitable for space-constrained designs.

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • Fast switching speed
  • Pb-free and RoHS compliant

This transistor is commonly used in signal amplification, switching circuits, and driver applications.

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