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P2804BVG Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
P2804BVGNIKOS131Yes

P2804BVG** is a power MOSFET manufactured by **NIKOS**.

The P2804BVG is a power MOSFET manufactured by NIKOS. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: NIKOS
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 40V
  • Continuous Drain Current (ID): 75A
  • Pulsed Drain Current (IDM): 300A
  • Power Dissipation (PD): 125W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 4.5mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 3000pF (typ)
  • Output Capacitance (Coss): 900pF (typ)
  • Reverse Transfer Capacitance (Crss): 200pF (typ)
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-220

Descriptions:

The P2804BVG is a high-performance N-Channel MOSFET designed for power switching applications. It offers low on-resistance and high current capability, making it suitable for power management in various electronic circuits.

Features:

  • Low on-resistance for reduced conduction losses
  • High current handling capability
  • Fast switching performance
  • Robust thermal characteristics
  • Suitable for DC-DC converters, motor control, and power supply applications

This information is based on manufacturer datasheets and technical documentation.

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