Professional IC Distribution & Technical Solutions

The TPC8012-H is a power MOSFET manufactured by TPC (Toshiba Products Corporation). Below are the factual specifications, descriptions, and features of the component:

Specifications:

• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 30V
• Continuous Drain Current (I_D): 60A
• Pulsed Drain Current (I_DM): 240A
• Power Dissipation (P_D): 79W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(ON)): 3.5mΩ (max) @ V_GS = 10V
• Threshold Voltage (V_GS(th)): 1.0V (min) – 2.5V (max)
• Input Capacitance (C_iss): 2000pF (typ)
• Output Capacitance (C_oss): 600pF (typ)
• Reverse Transfer Capacitance (C_rss): 200pF (typ)
• Turn-On Delay Time (t_d(on)): 15ns (typ)
• Turn-Off Delay Time (t_d(off)): 40ns (typ)
• Operating Temperature Range: -55°C to +175°C
• Package: TO-220

Descriptions:

• The TPC8012-H is a high-performance N-Channel MOSFET designed for power switching applications.
• It offers low on-resistance and high current handling capability, making it suitable for DC-DC converters, motor control, and power management circuits.
• The device is optimized for fast switching performance with minimal power loss.

Features:

• Low R_DS(ON): Ensures high efficiency in power applications.
• High Current Capability: Supports up to 60A continuous drain current.
• Fast Switching Speed: Minimizes switching losses.
• Robust Thermal Performance: TO-220 package provides effective heat dissipation.
• Wide Operating Temperature Range: Suitable for harsh environments.

For detailed application notes or reliability data, refer to the official TPC datasheet.