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2SK596S-B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SK596S-B2940Yes

part 2SK596S-B** is a **Silicon N-Channel MOS Field-Effect Transistor (MOSFET)** designed for high-speed switching applications.

The part 2SK596S-B is a Silicon N-Channel MOS Field-Effect Transistor (MOSFET) designed for high-speed switching applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): 3A
  • Power Dissipation (PD): 30W
  • On-Resistance (RDS(on)): 0.5Ω (max) @ VGS = 10V
  • Input Capacitance (Ciss): 150pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 25ns (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The 2SK596S-B is a low-voltage, high-speed switching MOSFET optimized for efficiency in power management circuits.
  • It features low on-resistance (RDS(on)) and fast switching speeds, making it suitable for DC-DC converters, motor drivers, and power supply applications.
  • The device is housed in a TO-220F package, providing good thermal performance.

Features:

  • Low On-Resistance: Minimizes conduction losses.
  • Fast Switching: Enhances efficiency in high-frequency applications.
  • High Voltage Tolerance: Supports up to 60V drain-source voltage.
  • Compact Package: TO-220F for easy mounting and heat dissipation.
  • Wide Temperature Range: Reliable operation in harsh environments.

This MOSFET is commonly used in switching regulators, power amplifiers, and automotive electronics due to its robust performance.

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