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98N03LT Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
98N03LTPHB250Yes

Here are the factual details about the **PHB 98N03LT** MOSFET: ### **Manufacturer:** PHB (Power House Battery) ### **Specifications:** - **Type:** N-Channel MOSFET - **Drain-Source Voltage (VDSS):** 30V - **Continuous Drain Current

Here are the factual details about the PHB 98N03LT MOSFET:

Manufacturer:

PHB (Power House Battery)

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 98A
  • Pulsed Drain Current (IDM): Higher than continuous rating (exact value depends on conditions)
  • RDS(ON) (Max): Typically low (exact value depends on VGS)
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): Varies with thermal conditions
  • Package: TO-252 (DPAK)

Descriptions:

  • Designed for high-current, low-voltage switching applications.
  • Suitable for power management in DC-DC converters, motor control, and battery protection circuits.

Features:

  • Low on-resistance (RDS(ON)) for reduced conduction losses.
  • Fast switching performance.
  • Enhanced thermal characteristics.
  • Avalanche energy rated for ruggedness.

For exact datasheet values, refer to the official PHB documentation.

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