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MX25L8006EM2I-12G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MX25L8006EM2I-12GMXIC128Yes

MX25L8006EM2I-12G** is a serial NOR Flash memory device manufactured by **Macronix International (MXIC)**.

The MX25L8006EM2I-12G is a serial NOR Flash memory device manufactured by Macronix International (MXIC). Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Capacity: 8 Mbit (1 MB)
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 2.7V - 3.6V
  • Speed:
  • Clock Frequency: Up to 104 MHz (Fast Read)
  • Page Program Time: 1.4 ms (typical)
  • Sector Erase Time: 45 ms (typical)
  • Chip Erase Time: 25 s (typical)
  • Temperature Range: Industrial (-40°C to +85°C)
  • Package: 8-pin SOIC (150mil)
  • Sector Architecture:
  • Uniform 4 KB sectors
  • 256-byte page size
  • Endurance: 100,000 program/erase cycles per sector
  • Data Retention: 20 years

Descriptions:

  • The MX25L8006EM2I-12G is a high-performance SPI NOR Flash memory designed for embedded systems requiring fast read operations and low power consumption.
  • It supports Standard, Dual, and Quad SPI modes for flexible performance optimization.
  • Features Deep Power-Down Mode (1 µA standby current) for power-sensitive applications.
  • Includes Software and Hardware Write Protection for data security.

Features:

  • SPI Modes Support:
  • Standard SPI (1-bit)
  • Dual I/O (2-bit)
  • Quad I/O (4-bit)
  • Advanced Security:
  • Block Protection (BP2, BP1, BP0)
  • Status Register Write Protection (SRP)
  • Power Supply Lock-Down (PSL)
  • Fast Performance:
  • Fast Read (104 MHz)
  • Dual/Quad Read (up to 80 MHz)
  • Low Power Consumption:
  • Active Read Current: 15 mA (typical)
  • Standby Current: 1 µA (typical)
  • Reliability:
  • 100K P/E cycles
  • 20-year data retention

This device is commonly used in consumer electronics, networking equipment, automotive systems, and industrial applications requiring reliable non-volatile storage.

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