Professional IC Distribution & Technical Solutions

The SI4800BDY is a power MOSFET manufactured by Siliconix (now part of Vishay). Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Siliconix (Vishay)
• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 30V
• Continuous Drain Current (I_D): 12A
• Pulsed Drain Current (I_DM): 48A
• Gate-Source Voltage (V_GS): ±20V
• Power Dissipation (P_D): 50W
• On-Resistance (R_DS(on)): 0.018Ω (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 1V to 2.5V
• Input Capacitance (C_iss): 1800pF
• Output Capacitance (C_oss): 600pF
• Reverse Transfer Capacitance (C_rss): 150pF
• Switching Speed: Fast switching capability
• Package: TO-252 (DPAK)

Descriptions:

• The SI4800BDY is a high-performance N-channel MOSFET designed for power management applications.
• It features low on-resistance and high current handling, making it suitable for switching and amplification in power circuits.
• The device is optimized for efficiency in DC-DC converters, motor control, and battery management systems.

Features:

• Low R_DS(on): Enhances power efficiency.
• High Current Capability: Supports up to 12A continuous drain current.
• Fast Switching: Suitable for high-frequency applications.
• Robust Thermal Performance: TO-252 package provides effective heat dissipation.
• Avalanche Energy Rated: Ensures reliability under transient conditions.

For detailed datasheet information, refer to Vishay/Siliconix documentation.