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2SB909M-QL Specifications

Detailed technical information and Application Scenarios

Product Details

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2SB909M-QL397Yes

2SB909M-QL** is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.

The 2SB909M-QL is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Below are its key specifications, descriptions, and features:

Manufacturer Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • DC Current Gain (hFE): 60-320 (varies with operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Package Type: TO-220F (isolated type)
  • Mounting Type: Through-hole
  • Polarity: PNP
  • Application: General-purpose amplification, switching, and power regulation.

Features:

  • High current capability (up to 3A).
  • Low saturation voltage for efficient switching.
  • Isolated package (TO-220F) for improved thermal performance.
  • Wide operating temperature range for robust performance in various environments.

This transistor is commonly used in power supply circuits, motor drivers, and audio amplifiers. Always refer to the datasheet for detailed electrical characteristics and application guidelines.

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