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D1055Q Specifications

Detailed technical information and Application Scenarios

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D1055Q300Yes

Part D1055Q Manufacturer Specifications, Descriptions, and Features** ### **Manufacturer Specifications:** - **Part Number:** D1055Q - **Type:** Power Transistor (NPN Darlington) - **Maximum Collector-Emitter Voltage (VCEO):** 100V - **Maximu

Part D1055Q Manufacturer Specifications, Descriptions, and Features

Manufacturer Specifications:

  • Part Number: D1055Q
  • Type: Power Transistor (NPN Darlington)
  • Maximum Collector-Emitter Voltage (VCEO): 100V
  • Maximum Collector Current (IC): 12A
  • Maximum Power Dissipation (PD): 100W
  • DC Current Gain (hFE): 1000 (min) at IC = 5A
  • Operating Temperature Range: -65°C to +150°C
  • Package Type: TO-3P (Plastic)

Description:

The D1055Q is an NPN Darlington power transistor designed for high-current and high-voltage applications. It is commonly used in power amplification, motor control, and switching circuits. The Darlington configuration provides high current gain, making it suitable for driving heavy loads with minimal input current.

Features:

  • High Current Gain (hFE): Ensures efficient signal amplification with minimal base current.
  • Low Saturation Voltage: Improves efficiency in switching applications.
  • Built-in Diode: Includes a freewheeling diode for inductive load protection.
  • Robust Construction: TO-3P package offers good thermal dissipation.
  • Wide Operating Temperature Range: Suitable for industrial and automotive applications.

This information is based on standard manufacturer datasheets. For exact performance characteristics, refer to the official documentation.

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