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NTS4001NT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
NTS4001NT1G	ONSEMI	18000	Yes

NTS4001NT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor**.

The NTS4001NT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

Transistor Type: PNP
Collector-Emitter Voltage (V_CE): -40V
Collector-Base Voltage (V_CB): -40V
Emitter-Base Voltage (V_EB): -5V
Collector Current (I_C): -200mA
Power Dissipation (P_D): 225mW
DC Current Gain (h_FE): 100–300 (at I_C = -10mA, V_CE = -1V)
Transition Frequency (f_T): 250MHz
Package: SOT-23 (SC-59)

Descriptions & Features:

Designed for general-purpose amplification and switching applications.
High current gain with low saturation voltage.
Suitable for low-power applications.
RoHS compliant and lead-free.

This transistor is commonly used in signal amplification, switching circuits, and other low-power electronic applications.

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