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HN24065S Specifications

Detailed technical information and Application Scenarios

Product Details

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HN24065S442Yes

Part Number:** HN24065S **Manufacturer:** Hitachi (Renesas Electronics Corporation) ### **Specifications:** - **Type:** NPN Silicon Epitaxial Planar Transistor - **Application:** High-frequency amplification, RF applications - **Collector-Em

Part Number: HN24065S

Manufacturer: Hitachi (Renesas Electronics Corporation)

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Application: High-frequency amplification, RF applications
  • Collector-Emitter Voltage (VCEO): 30V
  • Collector-Base Voltage (VCBO): 40V
  • Emitter-Base Voltage (VEBO): 4V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 300mW
  • Transition Frequency (fT): 4GHz (min)
  • Noise Figure (NF): 2.5dB (typ) @ 1GHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92 (Plastic Encapsulated)

Descriptions:

The HN24065S is an NPN silicon transistor designed for high-frequency and low-noise amplification in RF circuits. It is commonly used in VHF/UHF applications, such as communication devices and signal processing.

Features:

  • High transition frequency (fT) for RF applications
  • Low noise figure for improved signal clarity
  • Suitable for small-signal amplification
  • Compact TO-92 package for easy PCB mounting
  • Reliable performance in a wide temperature range

This information is based on manufacturer datasheets and technical documentation.

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