Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > Others016 > LBAT54SWT1G

LBAT54SWT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LBAT54SWT1GLRC33000Yes

LBAT54SWT1G** is a Schottky barrier diode manufactured by **LRC (Leshan Radio Company)**.

The LBAT54SWT1G is a Schottky barrier diode manufactured by LRC (Leshan Radio Company). Below are the factual details about this component:

Specifications:

  • Manufacturer: LRC (Leshan Radio Company)
  • Diode Type: Schottky Barrier Diode
  • Configuration: Dual Common Cathode
  • Maximum Reverse Voltage (VR): 30V
  • Average Rectified Forward Current (IO): 200mA
  • Peak Forward Surge Current (IFSM): 600mA (non-repetitive)
  • Forward Voltage Drop (VF): 0.5V (typical) at 10mA
  • Reverse Leakage Current (IR): 0.5µA (typical) at 25°C
  • Operating Temperature Range: -65°C to +125°C
  • Package: SOT-323 (SC-70)

Descriptions:

  • The LBAT54SWT1G is a high-efficiency Schottky diode designed for low-power applications.
  • It features a dual common cathode configuration, making it suitable for compact circuit designs.
  • The SOT-323 package ensures space-saving PCB mounting.

Features:

  • Low Forward Voltage Drop for improved efficiency.
  • Fast Switching Speed for high-frequency applications.
  • High Surge Current Capability for transient protection.
  • Miniature Package (SOT-323) for space-constrained designs.

This information is strictly based on manufacturer datasheets and technical documents.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • NM369K8D ,150,DIP8

    NM369K8D is a semiconductor component, typically a MOSFET or transistor, though specific details about the manufacturer are not widely documented.

  • HN24065S ,442,SMD24

    Part Number:** HN24065S **Manufacturer:** Hitachi (Renesas Electronics Corporation) ### **Specifications:** - **Type:** NPN Silicon Epitaxial Planar Transistor - **Application:** High-frequency amplification, RF applications - **Collector-Em

  • RB751V40T1G ,40265,SOD

    RB751V40T1G** is a Schottky Barrier Rectifier manufactured by **ON Semiconductor**.

  • SEM2106,,83,SSOP24

    AT-210,MACOM,83,SOP16

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales