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MMBTA42LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBTA42LT1GONSEMI48000Yes

High Voltage Transistors

The MMBTA42LT1G is a high-voltage NPN transistor manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN Bipolar Junction Transistor (BJT)
  • Collector-Emitter Voltage (VCEO): 300V
  • Collector-Base Voltage (VCBO): 300V
  • Emitter-Base Voltage (VEBO): 6V
  • Continuous Collector Current (IC): 500mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 40 (min) @ 10mA
  • Transition Frequency (fT): 50MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

  • Designed for high-voltage switching and amplification applications.
  • Suitable for low-power circuits requiring high breakdown voltage.
  • RoHS compliant and lead-free.

Features:

  • High Voltage Capability (300V VCEO)
  • Low Saturation Voltage
  • Fast Switching Speed
  • Small SOT-23 Package for Space-Constrained Designs
  • Pb-Free and Halogen-Free

This transistor is commonly used in power management, switching regulators, and high-voltage amplification circuits.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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