Professional IC Distribution & Technical Solutions

The 2N7002KT1G is a N-Channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

• Drain-Source Voltage (VDS): 60V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 115mA
• Pulsed Drain Current (IDM): 800mA
• Power Dissipation (PD): 200mW
• On-Resistance (RDS(on)): 7.5Ω @ VGS = 10V, ID = 50mA
• Threshold Voltage (VGS(th)): 1V (min), 2.5V (max)
• Input Capacitance (Ciss): 50pF
• Output Capacitance (Coss): 10pF
• Reverse Transfer Capacitance (Crss): 5pF
• Operating Temperature Range: -55°C to +150°C

Description:

The 2N7002KT1G is a small-signal MOSFET designed for low-power switching applications. It is housed in a SOT-23 package, making it suitable for space-constrained designs. It features low threshold voltage and fast switching speeds, making it ideal for logic-level applications.

Features:

• N-Channel Enhancement Mode MOSFET
• Low On-Resistance for efficient switching
• Low Threshold Voltage (compatible with logic-level signals)
• Fast Switching Speed
• Small SOT-23 Package for compact designs
• RoHS Compliant & Lead-Free

This MOSFET is commonly used in battery-powered circuits, load switching, signal amplification, and general-purpose switching applications.

(Note: Always refer to the official ON Semiconductor datasheet for detailed technical information.)