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2N7002KT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7002KT1GONSEMI150000Yes

2N7002KT1G** is a **N-Channel MOSFET** manufactured by **ON Semiconductor**.

The 2N7002KT1G is a N-Channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA
  • Pulsed Drain Current (IDM): 800mA
  • Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 7.5Ω @ VGS = 10V, ID = 50mA
  • Threshold Voltage (VGS(th)): 1V (min), 2.5V (max)
  • Input Capacitance (Ciss): 50pF
  • Output Capacitance (Coss): 10pF
  • Reverse Transfer Capacitance (Crss): 5pF
  • Operating Temperature Range: -55°C to +150°C

Description:

The 2N7002KT1G is a small-signal MOSFET designed for low-power switching applications. It is housed in a SOT-23 package, making it suitable for space-constrained designs. It features low threshold voltage and fast switching speeds, making it ideal for logic-level applications.

Features:

  • N-Channel Enhancement Mode MOSFET
  • Low On-Resistance for efficient switching
  • Low Threshold Voltage (compatible with logic-level signals)
  • Fast Switching Speed
  • Small SOT-23 Package for compact designs
  • RoHS Compliant & Lead-Free

This MOSFET is commonly used in battery-powered circuits, load switching, signal amplification, and general-purpose switching applications.

(Note: Always refer to the official ON Semiconductor datasheet for detailed technical information.)

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