Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > Others05 > 2N7002LT1G

2N7002LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7002LT1GONSEMI194166Yes

2N7002LT1G** is a **N-channel enhancement mode MOSFET** manufactured by **ON Semiconductor**.

The 2N7002LT1G is a N-channel enhancement mode MOSFET manufactured by ON Semiconductor.

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA
  • Pulsed Drain Current (IDM): 800mA
  • Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 7.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 0.8V (min), 3V (max)
  • Input Capacitance (Ciss): 25pF (typical)
  • Output Capacitance (Coss): 10pF (typical)
  • Reverse Transfer Capacitance (Crss): 5pF (typical)
  • Turn-On Delay Time (td(on)): 5ns (typical)
  • Turn-Off Delay Time (td(off)): 15ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (TO-236AB)

Descriptions:

  • Designed for low-voltage, low-current switching applications.
  • Suitable for signal switching, load switching, and general-purpose amplification.
  • RoHS compliant and halogen-free.

Features:

  • Low threshold voltage for compatibility with logic-level signals.
  • Fast switching speed for high-efficiency applications.
  • Low input and output capacitance for reduced power losses.
  • Small SOT-23 package for space-constrained designs.

This MOSFET is commonly used in battery-powered devices, portable electronics, and low-power switching circuits.

Would you like additional details on any specific parameter?

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • 4501AGM ,260,SOP8

    4501AGM** is a sealed lead-acid (SLA) Absorbent Glass Mat (AGM) battery designed for deep-cycle applications.

  • PT4105ESOP ,223,SOP8

    PT4105ESOP Manufacturer Product Specifications, Descriptions, and Features** ### **Manufacturer** The PT4105ESOP is manufactured by **Power Integrations**, a leading company in high-voltage integrated circuits for energy-efficient power conversion.

  • V52C4256Z80 ,204,ZIP28

    V52C4256Z80** is a high-speed CMOS static RAM (SRAM) manufactured by **VITELIC**.

  • LTC487CSW,LT,94,SOP16

    1602-15C,TI,94,PLCC

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales